The role of electrostatics and contacts in the «bottom – up» approach of nanoelectronics

Authors: Yu.A. Kruglyak, L.V. Remenyak

Year: 2015

Issue: 19

Pages: 182-194


The theory of electrical conduction is developed in the framework of the “bottom – up” approach without invoking the concept of an external electric field generated by a potential difference applied to the conductor. Within the concept of «bottom – up» approach of modern nanoelectronics the diffusion-drift model of a current on the basis of the Boltzmann transport equation is described. There are also discussed the role of the external electric field beyond the linear response regime, field-effect transistor and saturation current, the role of conductor charging, the point and extended models of a conductor, the role of contacts, the model of p-n junctions, the generation of a current in a conductor with asymmetric contacts.
In summary, we conclude, that when a band structure is given, number of modes can be evaluated and, if a model for the mean-free-pass for backscattering can be chosen, then the near-equilibrium transport coefficients can be evaluated. Next, the new generalized Ohm’s law was formulated and used which provides a quite different view of resistivity in terms of the number of modes per unit area and the mean-free-path. Finally, the transport model given is equally well applied either to nanoresistors or as well to micro- and macroconductors made of any kind of materials.

Tags: diffusion-drift model; molecular electronics; nanoelectronics; nanophysics; role of contacts; saturation current


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