Landauer – Datta – Lundstrom generalized electron transport model

Authors: Kruglyak Yu.A., Tereschenko T.M.

Year: 2016

Issue: 20

Pages: 110-120


This article briefly summarizes the Landauer – Datta – Lundstrom electron transport model. Provided a band structure is given, number of conduction modes can be evaluated and, if a model for a mean free pass for backscattering can be established, then the near-equilibrium thermoelectric transport coefficients can be calculated using the final expressions listed below for 1D, 2D, and 3D resistors in ballistic, quasi-ballistic and diffusive linear response regimes when there are differences in both voltage and temperature across the device. The final expressions of thermoelectric transport coefficients through the Fermi – Dirac integrals are collected for 1D, 2D and 3D semiconductors with parabolic band structure and for 2D graphene linear dispersion in ballistic and diffusive regimes with the power law scattering.

Tags: ballistic transport; conduction modes; diffusive transport; nanoelectronics; thermoelectric coefficients; transmission coefficient


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