Non-equilibrium Green’s functions method is applied to model transport problems for 1D and 2D uniform conductors using the nearest neighbor orthogonal tight-binding approximation in the frame of the «bottom – up» approach of modern nanoelectronics.
First of all we discuss the construction of the contact matrices of self-energies. The basic idea is that infinitely long conductor described by the Hamiltonian [H] is replaced by a conductor of the finite length described by the matrix [H + Σ1 + Σ2] with the open boundary conditions at the ends meaning “good” contacts, which do not create the reflected streams at its ends. Further we discuss 1D ballistic conductor, a 1D conductor with a single scattering center, then 2D conductor is modeling and explanation is given to the steplike dependence of the transmission coefficients over the energy, and finally there is given the representation of 2D/3D conductor in the form of parallel 1D conductors, which is not only physically correct but also extremely useful in interpreting experimental data.
In summary the physical adequacy of the Huckel approach is stated in the framework of the method of nonequilibrium Green’s functions.
Non-equilibrium Green’s functions method in matrix presentation is given with application to transport of electrons in quantum regime.
Basic topics of spintronics such as spin valve, interface resistance due to mode mismatch, spin potentials, non-local spin voltage, spin moment and its transport, Landau – Lifshitz – Gilbert equation, and explanation on its basis why a magnet has an “easy axis”, nanomagnet dynamics by spin current, polarizers and analyzers of spin current, diffusion equation for ballistic transport and current in terms of non-equllibrium potentials are discussed in the frame of the «bottom – up» approach of modern nanoelectronics.
General questions of electronic conductivity, conductivity modes, n- and p-type conductors and graphene are discussed in the frame of the «bottom – up» approach of modern nanoelectronics
Thermoelectric phenomena of Seebeck and Peltier, quality indicators and thermoelectric optimization, ballistic and diffusive phonon heat current are discussed in the frame of the «bottom – up» approach of modern nanoelectronics.
Current generation with the use of electrochemical potentials and Fermi functions is discussed in the frame of the bottom – up approach of modern theoretical and applied nanoelectronics.
Elastic resistor model, ballistic and diffusion transport and new formulation of the Ohm’s law are discussed in the frame of the bottom – up approach of modern nanoelectronics.